University of Surrey

Department of Physics

Barred Spiral Galaxy

Dr Igor Marko

Research Staff

Igor Marko
Igor Marko

Qualifications: PhD

Email:
Phone: Work: 01483 68 9409
Room no: 08 ATI 02

Further information

Biography

Igor Pavlovich Marko was born in 1974 in Belarus. He graduated with distinction from the department of quantum radiophysics and optoelectronics of the Belarusian State University in 1996. From 1996 until 2001 he studied the optical properties of ZnSe- and GaN-based wide bandgap semiconductors and optically pumped lasers in the Laboratory of Semiconductor Optics of B. I. Stepanov Institute of Physics of the Belarusian Academy of Sciences. He received the degree of PhD in 2000 (thesis: "Optically Pumped Lasers Based on ZnSe Epitaxial Layers and ZnMgSSe/ZnSe Quantum Well Heterostructures"). Since 2001 have been studying the properties of near-IR and mid-IR III-V based interband quantum dots, quantum well lasers, short-wavelength (<3.5um) quantum cascade lasers, InGaNAs avalanche photodiodes at the University of Surrey. Most recent activity includes developing of a new III-V material systems containing Bi.

Research Interests

My current research interests includes III-V visible light-emitting diodes and lasers, near-infrared quantum dot and quantum well lasers for telecommunications, avalanche photo-diodes for 1.3-1.5μm spectral range, mid-infrared interband and quantum cascade lasers. Most recent projects include developing of a new III-V material systems containing Bi (GaAsBi/GaAs, InGaAsBi/InP).

Publications

Highlights

  • Sayid SA, Marko IP, Sweeney SJ, Barrios P, Poole PJ. (2010) 'Efficiency limiting processes in 1.55 mu m InAs/InP-based quantum dots lasers'. AMER INST PHYSICS APPL PHYS LETT, 97 (16) Article number 161104
    doi: 10.1063/1.3504253
    Full text is available at: http://epubs.surrey.ac.uk/7903/
  • Crowley MT, Marko IP, Masse NF, Andreev AD, Tomic S, Sweeney SJ, O'Reilly EP, Adams AR. (2009) 'The Importance of Recombination via Excited States in InAs/GaAs 1.3 mu m Quantum-Dot Lasers'. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC IEEE J SEL TOP QUANT, 15 (3), pp. 799-807.
    doi: 10.1109/JSTQE.2009.2015679
  • Masse NF, Homeyer E, Marko IP, Adams AR, Sweeney SJ, Dehaese O, Piron R, Grillot F, Loualiche S. (2007) 'Temperature and pressure dependence of the recombination processes in 1.5 mu m InAs/InP (311)B quantum dot lasers'. AMER INST PHYSICS APPL PHYS LETT, 91 (13) Article number 131113
    doi: 10.1063/1.2790777
    Full text is available at: http://epubs.surrey.ac.uk/317/
  • Masse NF, Sweeney SJ, Marko IP, Adams AR, Hatori N, Sugawara M. (2006) 'Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers'. AMER INST PHYSICS APPL PHYS LETT, 89 (19) Article number 191118
    doi: 10.1063/1.2387114
    Full text is available at: http://epubs.surrey.ac.uk/476/

Journal articles

  • Hild K, Marko IP, Johnson SR, Yu SQ, Zhang YH, Sweeney SJ. (2011) 'Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 mu m GaAsSb/GaAs vertical cavity surface emitting lasers'. AMER INST PHYSICS APPL PHYS LETT, 99 (7) Article number 071110
    doi: 10.1063/1.3625938
    Full text is available at: http://epubs.surrey.ac.uk/7832/
  • Ikyo BA, Marko IP, Adams AR, Sweeney SJ, Canedy CL, Vurgaftman I, Kim CS, Kim M, Bewley WW, Meyer JR. (2011) 'Temperature dependence of 4.1 mu m mid-infrared type II "W" interband cascade lasers'. AMER INST PHYSICS APPL PHYS LETT, 99 (2) Article number 021102
    doi: 10.1063/1.3606533
    Full text is available at: http://epubs.surrey.ac.uk/7891/
  • Tan SL, Zhang SY, Soong WM, Goh YL, Tan LJJ, Ng JS, David JPR, Marko IP, Adams AR, Sweeney SJ, Allam J. (2011) 'GaInNAsSb/GaAs Photodiodes for Long-Wavelength Applications'. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC IEEE ELECTR DEVICE L, 32 (7), pp. 919-921.
    doi: 10.1109/LED.2011.2145351
  • Cheetham KJ, Krier A, Marko IP, Aldukhayel A, Sweeney SJ. (2011) 'Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes'. Applied Physics Letters, 99 (14)
    Full text is available at: http://epubs.surrey.ac.uk/7898/
  • Lever L, Hu Y, Myronov M, Liu X, Owens N, Gardes FY, Marko IP, Sweeney SJ, Ikonic Z, Leadley DR, Reed GT, Kelsall RW. (2011) 'Modulation of the absorption coefficient at 1:3μm in Ge/SiGe multiple quantum well heterostructures on silicon'. Optics Letters, 36 (21), pp. 4158-4160.
  • Lever L, Hu Y, Myronov M, Liu X, Owens N, Gardes FY, Marko IP, Sweeney SJ, Ikonić Z, Leadley DR, Reed GT, Kelsall RW. (2011) 'Strain engineering of the electroabsorption response in Ge/SiGe multiple quantum well heterostructures'. IEEE International Conference on Group IV Photonics GFP, , pp. 107-108.
  • Sayid SA, Marko IP, Sweeney SJ, Barrios P, Poole PJ. (2010) 'Efficiency limiting processes in 1.55 mu m InAs/InP-based quantum dots lasers'. AMER INST PHYSICS APPL PHYS LETT, 97 (16) Article number 161104
    doi: 10.1063/1.3504253
    Full text is available at: http://epubs.surrey.ac.uk/7903/
  • Sayid SA, Marko IP, Cannard PJ, Chen X, Rivers LJ, Lealman IF, Sweeney SJ. (2010) 'Thermal Characteristics of 1.55-mu m InGaAlAs Quantum Well Buried Heterostructure Lasers'. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC IEEE J QUANTUM ELECT, 46 (5), pp. 700-705.
    doi: 10.1109/JQE.2009.2039117
  • Ikyo BA, Marko IP, Adams AR, Sweeney SJ, Canedy CL, Vurgaftman I, Kim CS, Kim M, Bewley WW, Meyer JR. (2010) 'Temperature sensitivity of mid-infrared type II "W" interband cascade lasers (ICL) emitting at 4.1μm at room temperature'. Conference Digest - IEEE International Semiconductor Laser Conference, , pp. 41-42.
  • Sayid SA, Marko IP, Cannard PJ, Chen X, Rivers LJ, Lealman IF, Sweeney SJ. (2010) 'Thermal Performance of 1.55 mu m InGaAlAs Quantum Well Buried Heterostructure Lasers'. IEEE 2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), Kagawa, JAPAN:
  • Marko IP, Aldukhayel AM, Adams AR, Sweeney SJ, Teissier R, Baranov AN, Tomić S. (2010) 'Physical properties of short wavelength 2.6μm InAs/AlSb-based quantum cascade lasers'. Conference Digest - IEEE International Semiconductor Laser Conference, , pp. 95-96.
  • Mashanovich GZ, Headley WR, Milosevic MM, Owens N, Teo EJ, Xiong BQ, Yang PY, Nedeljkovic M, Anguita J, Marko I, Hu Y. (2010) 'Waveguides for mid-infrared group IV photonics'. IEEE International Conference on Group IV Photonics GFP, , pp. 374-376.
  • Sayid SA, Marko IP, Adams AR, Sweeney SJ, Barrios P, Poole P. (2010) 'Thermal behavior of 1.55 μm (100) InAs/InP-based quantum dot lasers'. Conference Digest - IEEE International Semiconductor Laser Conference, , pp. 75-76.
  • Crutchley BG, Marko IP, Adams AR, Sweeney SJ. (2010) 'Efficiency limitations of green InGaN LEDs and laser diodes'. Conference Digest - IEEE International Semiconductor Laser Conference, , pp. 27-28.
    doi: 10.1109/ISLC.2010.5642770
  • Sayid SA, Marko IP, Sweeney SJ, Poole P. (2010) 'Temperature sensitivity of 1.55 mu m (100) InAs/InP-based Quantum Dot Lasers'. IEEE 2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), Kagawa, JAPAN:
  • Tan SL, Tan LJJ, Goh YL, Zhang S, Ng JS, David JPR, Marko IP, Allam J, Sweeney SJ, Adams AR. (2010) 'Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing'. Proceedings of SPIE - The International Society for Optical Engineering, 7726
  • Crowley MT, Marko IP, Masse NF, Andreev AD, Tomic S, Sweeney SJ, O'Reilly EP, Adams AR. (2009) 'The Importance of Recombination via Excited States in InAs/GaAs 1.3 mu m Quantum-Dot Lasers'. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC IEEE J SEL TOP QUANT, 15 (3), pp. 799-807.
    doi: 10.1109/JSTQE.2009.2015679
  • Tan LJJ, Soong WS, Tan SL, Goh YL, Steer MJ, Ng JS, David JPR, Marko IP, Chamings J, Allam J, Sweeney SJ, Adams AR. (2009) 'Dark current mechanisms in InxGa1-xAs 1-yNy'. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, , pp. 233-234.
  • Adams AR, Marko IP, Sweeney SJ, Teissier R, Baranov AN, Tomic S. (2009) 'The effect of hydrostatic pressure on the operation of quantum cascade lasers'. SPIE-INT SOC OPTICAL ENGINEERING QUANTUM SENSING AND NANOPHOTONIC DEVICES VI, San Jose, CA: 7222 Article number 722203
    doi: 10.1117/12.814322
  • Masse NF, Marko IP, Adams AR, Sweeney SJ. (2009) 'Temperature insensitive quantum dot lasers: are we really there yet?'. SPRINGER JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, London, ENGLAND: 20, pp. 272-276.
    doi: 10.1007/s10854-008-9574-8
  • Marko IP, Ikyo AB, Adams AR, Sweeney SJ, Bachmann A, Kashani-Shirazi K, Amann M-C. (2009) 'Band-structure and gain-cavity tuning of 2.4-μm GaSb buried tunnel junction VCSELs'. CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference,
  • Crowley MT, Marko IP, Masse NF, Andreev AD, Sweeney SJ, O'Reilly EP, Adams AR. (2008) 'The importance of recombination via excited states in InAs/GaAs 1.3μm quantum dot lasers'. Conference Digest - IEEE International Semiconductor Laser Conference, , pp. 117-118.
  • Lealman I, Dosanjh S, Rivers L, O'Brien S, Cannard P, Sweeney SJ, Marko IP, Rushworth S. (2008) 'Reliable 1550nm SI BH lasers fabricated using an improved Ru precursor'. Conference Proceedings - International Conference on Indium Phosphide and Related Materials,
  • Masse NF, Homeyer E, Marko IP, Adams AR, Sweeney SJ, Dehaese O, Piron R, Grillot F, Loualiche S. (2007) 'Temperature and pressure dependence of the recombination processes in 1.5 mu m InAs/InP (311)B quantum dot lasers'. AMER INST PHYSICS APPL PHYS LETT, 91 (13) Article number 131113
    doi: 10.1063/1.2790777
    Full text is available at: http://epubs.surrey.ac.uk/317/
  • Marko IP, Adams AR, Sweeney SJ, Whitbread ND, Ward AJ, Asplin B, Robbins DJ. (2007) 'The influence of carrier density non-pinning on the output power of 1.55 μm lasers at high temperature'. Conference on Lasers and Electro-Optics Europe - Technical Digest,
  • Masse NF, Sweeney SJ, Marko IP, Adams AR, Hatori N, Sugawara M. (2006) 'Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers'. AMER INST PHYSICS APPL PHYS LETT, 89 (19) Article number 191118
    doi: 10.1063/1.2387114
    Full text is available at: http://epubs.surrey.ac.uk/476/
  • Hild K, Sweeney SJ, Wright S, Lock DA, Jin SR, Marko IP, Johnson SR, Chaparro SA, Yu SQ, Zhang YH. (2006) 'Carrier recombination in 1.3 mu m GaAsSb/GaAs quantum well lasers'. AMER INST PHYSICS APPL PHYS LETT, 89 (17) Article number 173509
    doi: 10.1063/1.2369649
    Full text is available at: http://epubs.surrey.ac.uk/104830/
  • Massé NF, Sweeney SJ, Marko IP, Andreev AD, Adams AR, Hatori N, Sugawara M. (2006) 'Intrinsic limitations of p-doped and undoped 1.3 μm InAs/GaAs quantum dot lasers'. Conference Digest - IEEE International Semiconductor Laser Conference, , pp. 143-144.

Conference papers

  • Ikyo AB, Marko IP, Adams AR, Sweeney SJ, Bachmann A, Kashani-Shirazi K, Amann MC. (2009) 'Gain peak-cavity mode alignment optimisation in buried tunnel junction mid-infrared GaSb vertical cavity surface emitting lasers using hydrostatic pressure'. INST ENGINEERING TECHNOLOGY-IET IET OPTOELECTRONICS, Cardiff, WALES: Semiconductor and Integrated Optoelectronics Conference (SIOE 2009) 3 (6), pp. 305-309.
    doi: 10.1049/iet-opt.2009.0045
  • Marko IP, Adams AR, Sweeney SJ, Teissier R, Baranov AN, Tomic S. (2009) 'Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressure'. WILEY-V C H VERLAG GMBH PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Fortaleza, BRAZIL: 13th International Conference on High Pressure Semiconductor Physics (HPSP-13) 246 (3), pp. 512-515.
    doi: 10.1002/pssb.200880501
  • Sweeney SJ, Hild K, Marko IP, Yu SQ, Johnson SR, Zhang YH. (2008) 'Thermal characteristics of 1.3 mu m GaAsSb/GaAs-based Edge- and Surface-emitting Lasers'. IEEE 2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, Sorrento, ITALY: IEEE 21st International Semiconductor Laser Conference, pp. 83-84.
  • Marko IP, Adams AR, Sweeney SJ, Teissier R, Baranov AN, Tomic S. (2008) 'Gamma-L scattering in InAs-based quantum cascade lasers studied using high hydrostatic pressure'. IEEE 2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, Sorrento, ITALY: IEEE 21st International Semiconductor Laser Conference, pp. 47-48.
  • Hild K, Sweeney SJ, Marko IP, Jin SR, Johnson SR, Chaparro SA, Yu SQ, Zhang YH. (2007) 'Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers'. WILEY-V C H VERLAG GMBH PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Barcelona, SPAIN: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12) 244 (1), pp. 197-202.
    doi: 10.1002/pssb.200672571
  • Marko IP, Adams AR, Sweeney SJ, Masse NF, Krebs R, Reithmaier JP, Forchel A, Mowbray DJ, Skolnick MS, Liu HY, Groom KM, Hatori N, Sugawara M. (2007) 'Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure'. WILEY-V C H VERLAG GMBH PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Barcelona, SPAIN: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12) 244 (1), pp. 82-86.
    doi: 10.1002/pssb.200672544
  • Marko IP, Masse NF, Sweeney SJ, Adams AR, Hatori N, Sugawara M. (2007) 'Recombination, transport and loss mechanisms in p-doped InAs/GaAs quantum dots'. AMER INST PHYSICS Physics of Semiconductors, Pts A and B, Vienna, AUSTRIA: 28th International Conference on the Physics of Semiconductors (ICPS-28) 893, pp. 837-838.
  • Fehse R, Marko I, Adams AR. (2003) 'Long wavelength lasers on GaAs substrates'. IEE-INST ELEC ENG IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, MUMBAI, INDIA: 6th International Conference on Optoelectronics, Fibre Optics and Photonics 150 (6), pp. 521-528.
    doi: 10.1049/ip-cds:20030959
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Page Owner: Igor Marko, i.marko@surrey.ac.uk
Page Created: Monday 5 October 2009 13:33:35 by lb0014
Last Modified: Thursday 17 November 2011 13:51:35 by lb0014
Expiry Date: Wednesday 5 January 2011 13:31:12
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